sot-23 plastic-encapsulate mosfets n-channel 30-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s4 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current i d 3.3 pulsed drain current i dm 15 continuous source-drain diode current i s 0.9 a maximum power dissipation p d 0.35 w thermal resistance from junction to ambient (t 5s) r ja 357 /w storage temperature t j 150 junction temperature t stg -55 ~+150 so t -23 1. gate 2. source 3. drain 2012- 0 willas electronic corp. SE2304 z
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 30 gate-source thre shold voltage v gs ( th) v ds =v gs , i d =250a 1.2 2.2 v gate-body leakage i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =30v, v gs =0v 1 a v gs =10v, i d =3.2a 0.049 0.060 drain-source on-state resistance a r ds(on) v gs =4.5v, i d =2.8a 0.061 0.075 ? forward transconductance a g fs v ds =4.5v, i d =2.5a 2.5 s dynamic b v ds =15v,v gs =10v,i d =3.4a 4.5 6.7 total gate charge q g 2.1 3.2 gate-source charge q gs 0.85 gate-drain charge q gd v ds =15v,v gs =4.5v,i d =3.4a 0.65 nc gate resistance r g f =1.0mhz 0.8 4.4 8.8 ? input capacitance c iss 235 output capacitance c oss 45 reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 17 pf turn-on delay time t d(on) 12 20 rise time t r 50 75 turn-off delay time t d(off) 12 20 fall time t f v dd =15v, r l =5.6 ?, i d 2.7a, v gen =4.5v,rg=1 ? 22 35 turn-on delay time t d(on) 5 10 rise time t r 12 20 turn-off delay time t d(off) 10 15 fall time t f v dd =15v, r l =5.6 ?, i d 2.7a, v gen =10v,rg=1 ? 5 10 ns drain-source body diode characteristics continuous source-drain diode current i s t c =25 1.4 a pulse diode forward current i sm 15 a body diode voltage v sd i s =-2.7a,v gs =0v 0.8 1.2 v notes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not s ubject to production testing. 2012- 0 willas electronic corp. sot-23 plastic-encapsulate mosfets se230
01234 0 1 2 3 4 5 0481 21 62 0 0 30 60 90 120 150 024681 0 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1e-3 0.01 0.1 1 10 024681 01 2 0 5 10 15 20 t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed typical characteristics transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =10v v gs =4.5v i d r ds(on) on-resistance r ds(on) (m ) drain current i d (a) i d =2.5a v gs r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) t a =25 pulsed i s v sd source current i s (a) source to drain voltage v sd (mv) v gs =10v,9v,8v,7v,6v,5v v gs =4v drain current i d (a) drain to source voltage v ds (v) v gs =2v v gs =3v output characteristics 2012- 0 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2304
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012- 0 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2304
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